On Analysis of Influence of Transport of Charge Carriers on Value of Their Velocity

Authors

  • E.L. Pankratov1 * Nizhny Novgorod State Agrotechnical University, 97 Gagarin avenue, Nizhny Novgorod, 603950, Russia.

https://doi.org/10.48314/imes.vi.50

Abstract

In this paper we analyzed changing of velocity of transport of charge carriers with changing of it's conditions. We formulate recommendations for changing of conditions of the transport to obtain required value of the considered velocity.

Keywords:

transport of charge carriers; controlling of velocity of charge carriers

References

  1. [1] Aleksandrov, O. V, Tyapkin, N. S., Mokrushina, S. A., & Fomin, V. N. (2022). The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs. Semiconductors, 56(3), 160–163. https://doi.org/10.1134/S1063782622020038%0A%0A
  2. [2] Zhukov, A. E., Kryzhanovskaya, N. V, Maximov, M. V, Egorov, A. Y., Pavlov, M. M., Zubov, F. I., & Asryan, L. V. (2011). Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability. Semiconductors, 45(4), 530–535. https://doi.org/10.1134/S1063782611040233%0A%0A
  3. [3] Lebedev, A. A., Kozlovski, V. V, Levinshtein, M. E., Malevsky, D. A., Oganesyan, G. A., Strel’chuk, A. M., & Davydovskaya, K. S. (2022). Annealing High-Voltage 4 H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature. Semiconductors, 56(3), 189–194. https://doi.org/10.1134/S1063782622020099%0A%0A
  4. [4] Lebedev, A. A., Kozlovski, V. V, Davydovskaya, K. S., & Levinshtein, M. E. (2021). Radiation hardness of silicon carbide upon high-temperature electron and proton irradiation. Materials, 14(17), 4976. https://doi.org/10.3390/ma14174976
  5. [5] Xu, Y., Sui, J., Cao, F., Li, X., Yang, J., & Wang, Y. (2021). Low temperature Ni/Si/Al ohmic contacts to p-type 4H-SiC. Solid-state electronics, 186, 108106. https://doi.org/10.1016/j.sse.2021.108106
  6. [6] Lebedev, A. A., Ivanov, A. M., & Strokan, N. B. (2004). Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films. Semiconductors, 38(2). 10.1134/1.1648363%0A
  7. [7] Kalinina, E. V, Kossov, V. G., Yafaev, R. R., Strel’chuk, A. M., & Violina, G. N. (2010). A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum. Semiconductors, 44(6), 778–788. https://doi.org/10.1134/S1063782610060151%0A%0A
  8. [8] Belyaev, A. E., Boltovets, N. S., Bobyl, A. V, Ivanov, V. N., Kapitanchuk, L. M., Kladko, V. P., … others. (2010). Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with $γ$-ray 60Co photons. Semiconductors, 44(12), 1559–1566. https://doi.org/10.1134/S1063782610120055
  9. [9] Ermolovich, I. B., Milenin, V. V, Red’ko, R. A., & Red’ko, S. M. (2009). Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing. Semiconductors, 43(8), 980–984. https://doi.org/10.1134/S106378260908003X%0A%0A
  10. [10] Shalimova, K. V. (1985). Physics of semiconductors.
  11. [11] Gaidar, G. P. (2014). On the kinetics of electron processes in 60Co $γ$-irradiated n-Ge single crystals. Semiconductors, 48(9), 1141–1144. https://doi.org/10.1134/S1063782614090097%0A%0A

Published

2026-05-02

Issue

Articles in Press

Section

Articles

How to Cite

Pankratov1, E. (2026). On Analysis of Influence of Transport of Charge Carriers on Value of Their Velocity. Intelligence Modeling in Electromechanical Systems. https://doi.org/10.48314/imes.vi.50